Qualcomm announces 10nm Snapdragon 835 chipset
Qualcomm just unveiled its newest Snapdragon flagship chipset and it will be built using the latest 10-nanometer process.
The Snapdragon 835 SoC (system on a chip) will be built by Samsung using its 10nm FinFET process. This will be the first 10nm chipset from Qualcomm coming from the 14nm Snapdragon 821. The new processor has 27% increase in performance while drawing 40% less power. Qualcomm expects their new chipset to out as early as the first half of 2017 and that includes the upcoming Samsung Galaxy S8.
The new chip is equipped with Quick Charge 4 with 20% faster charging from the previous version. As per company statement, it will be able to give you five hours of extra juice with just five minutes of charging. In just 15 minutes, it’ll give Snapdragon 835 phones a half-full battery. Too good to be true but with today’s rate of charging, it’s feasible.
It uses the INOV or Intelligent Negotiation for Optimum Voltage tech which is compatible with Google’s new requirements for USB Type-C charging.