The upcoming realme GT Neo 3 will sport a MediaTek Dimensity 8100 chipset and a 150W UltraDart Charging enabled by GaNFast technology.
Navitas Semiconductor, the industry leader in gallium nitride (GaN) power integrated circuits, said that its GaNFast technology will power the realme GT Neo 3’s fast charging technology. The smartphone’s 150W UltraDart Charging Architecture (UDCA) can charge the 4,500mAh battery from 0-50% in just 5 minutes. It also has advanced heat management and battery protection to ensure cool and long-life operation.
For the chipset, it packs the MediaTek Dimensity 8100 manufactured using the 5nm process, with four Cortex-A78 cores clocked at up to 2.85GHz, four Cortex-A55 cores clocked at up to 2.0GHz, and a Mali-G610 GPU. It also supports LPDDR5 RAM, UFS 3.1, 5G, WiFi 6E, and Bluetooth 5.3.