Samsung unveils their first 8Gb LPDDR5 DRAM that is said to support 5G and AI-powered mobile devices. Among their premium DRAM lineup are the 16Gb GDDR6 DRAM that started production since December 2017 and the 16Gb DDR5 DRAM that was developed last February 2018.
The 8Gb LPDDR5 DRAM boasts a data rate of up to 6,400Mb/s which is said to be 1.5 times as fast as the chips that are currently used in flagship devices e.g. LPDDR4X DRAM with 4,266Mb/s. This increase is also said to be capable of sending up to 51.2GB of data in a second. It has a 10nm architecture and will be available in 6,400Mb/s at a 1.1operating voltage and 5,500Mb/s at a 1.05V bandwidths. Samsung stated that this has been achieved by doubling the number of memory subdivisions, previously 8, within a DRAM cell and making it to 16 subdivisions.
Samsung also introduced the “deep sleep mode” feature which would reduce the power consumption to approximately half of the “idle mode” that they have implemented in the LPDDR4X DRAM. With it, the power saved is said to increase by 30 percent making smartphones yield a longer battery life.
Samsung stated that they designed the 8Gb LPDDR5 DRAM to support 5G and AI capabilities of smartphones along with UHD compatibilities. The company, together with leading global chip vendors, has also completed functional testing and validation of a prototype 8GB LPDDR5 DRAM package, which is comprised of eight 8Gb LPDDR5 chips. They are planning to begin mass production of their newest DRAM chips but didn’t say the specifics on when it will start yet.
Source: Samsung Newsroom